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DMN2013UFDE
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
±8
Units
V
V
Continuous Drain Current (Note 7) V GS = 4.5V
Continuous Drain Current (Note 7) V GS = 2.5V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current
Steady
State
t < 10s
Steady
State
t <1 0s
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I D
I D
I DM
I S
10.5
8.5
12.5
10.0
9.4
7.5
11.2
8.8
80
2.5
A
A
A
A
A
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
T A = +25°C
T A = +70°C
Steady state
t<10s
T A = +25°C
T A = +70°C
Steady state
t<10s
P D
R ? JA
P D
R ? JA
R ? JC
T J, T STG
0.66
0.42
189
132
2.03
1.31
61
43
9.3
-55 to +150
W
°C/W
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = +25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
—
—
—
—
—
—
1
±2
V
μA
μA
V GS = 0V, I D = 250 μ A
V DS = 16V, V GS = 0V
V GS = ±8V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V GS(th)
0.5
—
1.1
V
V DS = V GS , I D = 250 μ A
8.4
11
V GS = 4.5V, I D = 8.5A
Static Drain-Source On-Resistance
R DS (ON)
—
9.8
12
13
30
m ?
V GS = 2.5V, I D = 8.5A
V GS = 1.8V, I D = 1A
15
50
V GS = 1.5V, I D = 0.5A
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
—
—
10
—
—
1.2
S
V
V DS = 5V, I D = 4A
V GS = 0V, I S = 8.5A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = 4.5V)
Total Gate Charge (V GS = 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
—
—
—
—
—
—
—
—
—
—
—
—
2453
275
257
1.2
14.3
25.8
1.8
2.1
9.9
24.5
66.4
20.8
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
?
nC
nC
nC
nC
ns
ns
ns
ns
V DS = 10V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V DS = 10V, I D = 8.5A
V DS = 10V, I D = 8.5A
V GS = 4.5V, R G = 1.8 ?
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
8. Short duration pulse test used to minimize self-heating effect
9. Guaranteed by design. Not subject to production testing
DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
2 of 6
www.diodes.com
April 2013
? Diodes Incorporated
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